Strained and strain-balanced quantum well devices for high-efficiency tandem solar cells

被引:102
作者
Ekins-Daukes, NJ
Barnes, JM
Barnham, KWJ
Connolly, JP
Mazzer, M
Clark, JC
Grey, R
Hill, G
Pate, MA
Roberts, JS
机构
[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, London SW7 2BZ, England
[2] CNR, Ist Nuovi Mat Elettr, I-73100 Lecce, Italy
[3] Univ Sheffield, EPSRC Facil 3 5, Sheffield S1 3JD, S Yorkshire, England
关键词
quantum well solar cell; GaAs/InGaAs; strain-balance and tandem solar cell;
D O I
10.1016/S0927-0248(00)00346-9
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
The state of GaAs/InGaAs quantum well solar cell research is reviewed. The effect of strain upon the GaAs/InGaAs cells is discussed and the limits to a strained GaAs/InGaAs cell established. The strain-balance approach is suggested as a means of overcoming the limits inherent to the strained approach and the principle is demonstrated in two differing device configurations. The strain-balance devices show enhanced efficiencies over their strained counterparts and in one case, comparable efficiency to a good GaAs control cell. The application of these cells to tandem structures is discussed, indicating the potential for a substantial efficiency enhancement. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:71 / 87
页数:17
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