Strained and strain-balanced quantum well devices for high-efficiency tandem solar cells

被引：102

作者：

Ekins-Daukes, NJ

Barnes, JM

Barnham, KWJ

Connolly, JP

Mazzer, M

Clark, JC

Grey, R

Hill, G

Pate, MA

Roberts, JS

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Blackett Lab, London SW7 2BZ, England

[2] CNR, Ist Nuovi Mat Elettr, I-73100 Lecce, Italy

[3] Univ Sheffield, EPSRC Facil 3 5, Sheffield S1 3JD, S Yorkshire, England

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2001年 / 68卷 / 01期

关键词：

quantum well solar cell; GaAs/InGaAs; strain-balance and tandem solar cell;

D O I：

10.1016/S0927-0248(00)00346-9

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The state of GaAs/InGaAs quantum well solar cell research is reviewed. The effect of strain upon the GaAs/InGaAs cells is discussed and the limits to a strained GaAs/InGaAs cell established. The strain-balance approach is suggested as a means of overcoming the limits inherent to the strained approach and the principle is demonstrated in two differing device configurations. The strain-balance devices show enhanced efficiencies over their strained counterparts and in one case, comparable efficiency to a good GaAs control cell. The application of these cells to tandem structures is discussed, indicating the potential for a substantial efficiency enhancement. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：71 / 87

页数：17

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