Magnetic, electrical properties, and structure of Cr-AlN and Mn-AlN thin films grown on Si substrates

被引：26

作者：

Endo, Y

Sato, T

Takita, A

Kawamura, Y

Yamamoto, M

机构：

[1] Osaka Univ, Dept Mat Sci & Engn, Suita, Osaka 5650871, Japan

[2] Osaka Univ, Grad Sch Engn, Frontier Res Ctr, Suita, Osaka 5650871, Japan

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2005年 / 41卷 / 10期

关键词：

Cr-AlN thin film; dilute magnetic semiconductor; Mn-AlN thin film; room temperature ferromagnetism;

D O I：

10.1109/TMAG.2005.854686

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have studied magnetic, electrical properties, and structure of Cr-AIN and Mn-AIN thin films grown on the Si substrates. Each magnetic state in Al-0.93 Cr-0.07 N and Al-0.91 Mn-0.09 N thin films changes from a paramagnetic state to a superparamagnetic state as temperature decreases. Room temperature (RT) ferromagnetism cannot be observed in each thin film. Each electrical property in Al-0.93 Cr-0.07 N and Al0.91Mn0.09N thin films becomes semiconducting, since the electrical resistivities of these thin films are higher than 10(7)mu Omega(.)cm at RT. At 77 K, tunneling phenomena for the Al0.93Cr0.07N thin film and rectification for the Al-0.91 Mn0.09N thin film can be observed. Furthermore, the crystal structure in each thin film is also a polycrystalline structure with the preferential orientation of hcp (0001).

引用

页码：2718 / 2720

页数：3

共 10 条

[1] Indication of hysteresis in AlMnN [J].

Frazier, R ;

Thaler, G ;

Overberg, M ;

Gila, B ;

Abernathy, CR ;

Pearton, SJ .

APPLIED PHYSICS LETTERS, 2003, 83 (09) :1758-1760

[2] High curie temperatures in ferromagnetic Cr-doped AlN thin films [J].

Kumar, D ;

Antifakos, J ;

Blamire, MG ;

Barber, ZH .

APPLIED PHYSICS LETTERS, 2004, 84 (24) :5004-5006

[3] Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN [J].

Liu, HX ;

Wu, SY ;

Singh, RK ;

Gu, L ;

Smith, DJ ;

Newman, N ;

Dilley, NR ;

Montes, L ;

Simmonds, MB .

APPLIED PHYSICS LETTERS, 2004, 85 (18) :4076-4078

[4] DILUTED MAGNETIC III-V SEMICONDUCTORS [J].

MUNEKATA, H ;

OHNO, H ;

VONMOLNAR, S ;

SEGMULLER, A ;

CHANG, LL ;

ESAKI, L .

PHYSICAL REVIEW LETTERS, 1989, 63 (17) :1849-1852

[5] (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs [J].

Ohno, H ;

Shen, A ;

Matsukura, F ;

Oiwa, A ;

Endo, A ;

Katsumoto, S ;

Iye, Y .

APPLIED PHYSICS LETTERS, 1996, 69 (03) :363-365

[6] Room-temperature ferromagnetism in Cr-doped GaN single crystals [J].

Park, SE ;

Lee, HJ ;

Cho, YC ;

Jeong, SY ;

Cho, CR ;

Cho, S .

APPLIED PHYSICS LETTERS, 2002, 80 (22) :4187-4189

[7] Properties of highly Cr-doped AlN [J].

Polyakov, AY ;

Smirnov, NB ;

Govorkov, AV ;

Frazier, RM ;

Liefer, JY ;

Thaler, GT ;

Abernathy, CR ;

Pearton, SJ ;

Zavada, JM .

APPLIED PHYSICS LETTERS, 2004, 85 (18) :4067-4069

[8] Room temperature ferromagnetic properties of (Ga, Mn)N [J].

Reed, ML ;

El-Masry, NA ;

Stadelmaier, HH ;

Ritums, MK ;

Reed, MJ ;

Parker, CA ;

Roberts, JC ;

Bedair, SM .

APPLIED PHYSICS LETTERS, 2001, 79 (21) :3473-3475

[9]

SINGH RK, 2005, APPL PHYS LETT, V86, DOI UNSP 012504-1-012504-3

[10] Synthesis, characterization, and modeling of high quality ferromagnetic Cr-doped AlN thin films [J].

Wu, SY ;

Liu, HX ;

Gu, L ;

Singh, RK ;

Budd, L ;

van Schilfgaarde, M ;

McCartney, MR ;

Smith, DJ ;

Newman, N .

APPLIED PHYSICS LETTERS, 2003, 82 (18) :3047-3049

← 1 →