RGe2-x compounds (R = Y, Gd-Ho) with new ordered ThSi2-defect structures

被引：21

作者：

Venturini, G ^{[1
]}

Ijjaali, I ^{[1
]}

Malaman, B ^{[1
]}

机构：

[1] Univ Nancy 1, CNRS, UMR 7555, Lab Chim Solide Min, F-54506 Vandoeuvre Nancy, France

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1999年 / 285卷 / 1-2期

关键词：

rare earth germanides; crystal structure determination; defect structures; vacancy ordering;

D O I：

10.1016/S0925-8388(99)00030-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The R-Ge systems (R = Y, Gd-Ho) have been investigated in the composition range 60-65 Ge at.% and the ThSi,-type RGe2-x compounds have been checked by X-ray powder diffraction. Besides the well-known Y3Ge5-type R3Ge5 compounds, 14 new ordered ThSi2-defect derivatives have been characterized. Some structural hypothesis are made and the crystal structures of the Dy11Ge18, Ho14Ge23, Gd(17)Ge(29 )have been refined from powder X-ray diffraction. The evolution in the structural series is discussed and compared with the evolution in the AlB2 defect derivatives. (C) 1999 Elsevier Science S.A. all rights reserved.

引用

页码：194 / 203

页数：10

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