Electrical-field control of metal-insulator transition at room temperature in Pb(Zr0.2Ti0.8)O3/La1-xBaxMnO3 field-effect transistor

被引：76

作者：

Kanki, T

Park, YG

Tanaka, H

Kawai, T

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 23期

关键词：

D O I：

10.1063/1.1632028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have constructed field-effect transistor structures that consist of a ferromagnetic (La,Ba)MnO3 channel and a ferroelectric PbZr0.2Ti0.8O3 gate insulator with the aim of controlling the metal-insulator transition at room temperature by applying an electric field. Investigations have revealed that the transition temperature changed from 237.0 K to 242.0 K for the La0.90Ba0.10MnO3 channel layer by ferroelectric remnant polarity (+/-50 muC/cm(2)) and from 280.5 K to 283.0 K (+/-26 muC/cm(2)) for the La0.85Ba0.15MnO3 channel layer. These shifts, which are linearly proportional to the magnitude of ferroelectric remnant polarization, are induced by the accumulation charge due to the electric field. (C) 2003 American Institute of Physics.

引用

收藏

页码：4860 / 4862

页数：3

相关论文

共 20 条

[1] Magnetotransport properties of fully strained epitaxial thin films of La2/3Ca1/3MnO3 grown on SrTiO3 [J].

Bibes, M ;

Casanove, MJ ;

Balcells, L ;

Valencia, S ;

Martínez, B ;

Ousset, JC ;

Fontcuberta, J .

APPLIED SURFACE SCIENCE, 2002, 188 (1-2) :202-208

[2] Epitaxial ferroelectric/giant magnetoresistive heterostructures for magnetosensitive memory cell [J].

Grishin, AM ;

Khartsev, SI ;

Johnsson, P .

APPLIED PHYSICS LETTERS, 1999, 74 (07) :1015-1017

[3] Enhancement of magnetoresistance at room temperature in La0.8Ba0.2MnO3 epitaxial thin film [J].

Kanki, T ;

Tanaka, H ;

Kawai, T .

SOLID STATE COMMUNICATIONS, 2000, 114 (05) :267-270

[4] Nanoscale observation of room-temperature ferromagnetism on ultrathin (La,Ba)MnO3 films [J].

Kanki, T ;

Li, RW ;

Naitoh, Y ;

Tanaka, H ;

Matsumoto, T ;

Kawai, T .

APPLIED PHYSICS LETTERS, 2003, 83 (06) :1184-1186

[5] Anomalous strain effect in La0.8Ba0.2MnO3 epitaxial thin film:: Role of the orbital degree of freedom in stabilizing ferromagnetism -: art. no. 224418 [J].

Kanki, T ;

Tanaka, H ;

Kawai, T .

PHYSICAL REVIEW B, 2001, 64 (22)

[6] Ferroelectric field effect transistor based on epitaxial perovskite heterostructures [J].

Mathews, S ;

Ramesh, R ;

Venkatesan, T ;

Benedetto, J .

SCIENCE, 1997, 276 (5310) :238-240

[7] GIANT MAGNETIC TUNNELING EFFECT IN FE/AL2O3/FE JUNCTION [J].

MIYAZAKI, T ;

TEZUKA, N .

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1995, 139 (03) :L231-L234

[8] LARGE MAGNETORESISTANCE AT ROOM-TEMPERATURE IN FERROMAGNETIC THIN-FILM TUNNEL-JUNCTIONS [J].

MOODERA, JS ;

KINDER, LR ;

WONG, TM ;

MESERVEY, R .

PHYSICAL REVIEW LETTERS, 1995, 74 (16) :3273-3276

[9] Unusual electric field effects in Nd0.7Sr0.3MnO3 [J].

Ogale, SB ;

Talyansky, V ;

Chen, CH ;

Ramesh, R ;

Greene, RL ;

Venkatesan, T .

PHYSICAL REVIEW LETTERS, 1996, 77 (06) :1159-1162

[10] Electric-field control of ferromagnetism [J].

Ohno, H ;

Chiba, D ;

Matsukura, F ;

Omiya, T ;

Abe, E ;

Dietl, T ;

Ohno, Y ;

Ohtani, K .

NATURE, 2000, 408 (6815) :944-946