Electric-field control of ferromagnetism

被引：1883

作者：

Ohno, H ^{[1
]}

Chiba, D ^{[1
]}

Matsukura, F ^{[1
]}

Omiya, T ^{[1
]}

Abe, E ^{[1
]}

Dietl, T ^{[1
]}

Ohno, Y ^{[1
]}

Ohtani, K ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

NATURE | 2000年 / 408卷 / 6815期

关键词：

D O I：

10.1038/35050040

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

It is often assumed that it is not possible to alter the properties of magnetic materials once they have been prepared and put into use. For example, although magnetic materials are used in information technology to store trillions of bits (in the form of magnetization directions established by applying external magnetic fields), the properties of the magnetic medium itself remain unchanged on magnetization reversal. The ability to externally control the properties of magnetic materials would be highly desirable from fundamental and technological viewpoints, particularly in view of recent developments in magnetoelectronics and spintronics(1,2). In semiconductors, the conductivity can be varied by applying an electric field, but the electrical manipulation of magnetism has proved elusive. Here we demonstrate electric-field control of ferromagnetism in a thin-film semiconducting alloy, using an insulating-gate field-effect transistor structure. By applying electric fields, we are able to vary isothermally and reversibly the transition temperature of hole-induced ferromagnetism.

引用

页码：944 / 946

页数：3

共 20 条

[1] CRITERION FOR FERROMAGNETISM FROM OBSERVATIONS OF MAGNETIC ISOTHERMS [J].