The limiting efficiency of band gap graded solar cells

被引：21

作者：

Rafat, NH

Habib, SED ^{[1
]}

机构：

[1] Cairo Univ, Fac Elect & Commun, Giza, Egypt

[2] Cairo Univ, Fac Engn, Giza 12211, Egypt

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1998年 / 55卷 / 04期

关键词：

solar cells; band gap grading; limiting efficiency;

D O I：

10.1016/S0927-0248(98)00108-1

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Two fundamental mechanisms limit the maximum attainable efficiency of solar cells, namely the radiative recombination and Auger recombination. We show in this paper that proper band gap grading of the solar cell localizes the Auger recombination around the metallurgical junction. Two beneficial effects result from this Auger recombination localization; first the cell is less sensitive to the surface conditions, and second, the previous estimates for the limiting efficiency of solar cells by Shockley, Tiedje, and Green are revised upwardly. We calculate the optimum bandgap grading profile for several real material systems, including GaInAsP lattice matched to InP, and a-SiGe on a-Si substrate. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：341 / 361

页数：21

共 36 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].