Characterization of individual threading dislocations in GaN using ballistic electron emission microscopy

被引：23

作者：

Im, HJ

Ding, Y

Pelz, JP

Heying, B

Speck, JS

机构：

[1] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93109 USA

来源：

PHYSICAL REVIEW LETTERS | 2001年 / 87卷 / 10期

关键词：

D O I：

10.1103/PhysRevLett.87.106802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Threading dislocations (TDs) of molecular beam epitaxy grown GaN film were studied with ultrahigh vacuum ballistic electron emission microscopy in order to quantify any fixed negative charge at identifiable TDs, with similar to 3 nm spatial and similar to 10 meV local barrier resolution. In contrast to several prior studies, we find no indication of fixed negative dislocation charge at specific TD structures, with a conservative upper limit of similar to0.25 e(-) per c-axis unit cell. We do observe evidence of positive surface charge at TDs and at GaN step edges, which may be due to local piezoelectric fields.

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页码：art. no. / 106802

页数：4

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