Direct observation of localized high current densities in GaN films

Local high current densities in areas around dislocations with a screw component might be responsible for the observed high leakage currents in GaN-based electronic devices. Using ballistic electron emission microscopy, threading dislocations with a screw component are found to be accompanied by high current densities and low effective Schottky barrier heights. The electronic states responsible for this extremely nonuniform behavior of GaN films are metastable trap states. The experimental results show that acceptor-and donor-like charge traps coexist in the vicinity of dislocations with a screw component. (C) 1999 American Institute of Physics. [S0003-6951(99)04616-1].