GaN microwave electronics

被引：223

作者：

Mishra, UK ^{[1
]}

Wu, YF

Keller, BP

Keller, S

Denbaars, SP

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] WideGap Technol, Goleta, CA 93117 USA

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1998年 / 46卷 / 06期

关键词：

FET; GaN; HEMT; microwave; transistor;

D O I：

10.1109/22.681197

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, recent progress of AlGaN/GaN-based power high-electron-mobility transistors (HEMT's) is reviewed, Remarkable improvement in performances was obtained through adoption of high Al contents in the AlGaN layer. The mobility in these modulation-doped structures is about 1200 cm(2).V-1.s(-1) at 300 K with sheet densities of over 1 x 10(13) cm(-2). The current density is over 1 A/mm with gate-drain breakdown voltages up to 280 V. F-t values up to 52 GHz have been demonstrated. Continuous wave (CW) power densities greater than 3 W/mm at 18 GHz have been achieved.

引用

页码：756 / 761

页数：6

共 9 条

[1] A 1.45-W/MM, 30-GHZ INP-CHANNEL POWER HEMT
AINA, O
BURGESS, M
MATTINGLY, M
MEERSCHAERT, A
OCONNOR, JM
TONG, M
KETTERSON, A
ADESIDA, I
[J]. IEEE ELECTRON DEVICE LETTERS, 1992, 13 (05) : 300 - 302
[2] AKATAS O, 1997, IEEE ELECTR DEVICE L, V18, P293
[3] MONTE-CARLO SIMULATION OF ELECTRON-TRANSPORT IN GALLIUM NITRIDE
GELMONT, B
KIM, K
SHUR, M
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (03) : 1818 - 1821
[4] PULSE-DOPED ALGAAS INGAAS PSEUDOMORPHIC MODFETS
MOLL, N
HUESCHEN, MR
FISCHERCOLBRIE, A
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (07) : 879 - 886
[5] SRIRAM S, 1997, 55 DEV RES C BOULD C
[6] Measured microwave power performance of AlGaN/GaN MODFET
Wu, YF
Keller, BP
Keller, S
Kapolnek, D
Denbaars, SP
Mishra, UK
[J]. IEEE ELECTRON DEVICE LETTERS, 1996, 17 (09) : 455 - 457
[7] Short channel AlGaN/GaN MODFET's with 50-GHz f(T) and 1.7-W/mm output-power at 10 GHz
Wu, YF
Keller, BP
Keller, S
Nguyen, NX
Le, M
Nguyen, C
Jenkins, TJ
Kehias, LT
Denbaars, SP
Mishra, UK
[J]. IEEE ELECTRON DEVICE LETTERS, 1997, 18 (09) : 438 - 440
[8] Short-channel Al0.5Ga0.5N/GaN MODFETs with power density >3W/mm at 18GHz
Wu, YF
Keller, BP
Fini, P
Pusl, J
Le, M
Nguyen, NX
Nguyen, C
Widman, D
Keller, S
Denbaars, SP
Mishra, UK
[J]. ELECTRONICS LETTERS, 1997, 33 (20) : 1742 - 1743
[9] Bias dependent microwave performance of AlGaN/GaN MODFET's up to 100 V
Wu, YF
Keller, S
Kozodoy, P
Keller, BP
Parikh, P
Kapolnek, D
Denbaars, SP
Mishra, UK
[J]. IEEE ELECTRON DEVICE LETTERS, 1997, 18 (06) : 290 - 292

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