EFFECT OF ATMOSPHERIC-PRESSURE MOCVD GROWTH-CONDITIONS ON UV BAND-EDGE PHOTOLUMINESCENCE IN GAN THIN-FILMS

被引：27

作者：

KELLER, BP

KELLER, S

KAPOLNEK, D

KATO, M

MASUI, H

IMAGI, S

MISHRA, UK

DENBAARS, SP

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

[2] STANLEY ELECT CO LTD,YOKOHAMA,KANAGAWA,JAPAN

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 13期

关键词：

PHOTOLUMINESCENCE; CHEMICAL VAPOR DEPOSITION;

D O I：

10.1049/el:19950741

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strong hand-edge luminescence in GaN films grown by atmospheric pressure MOCVD is observed. The effect of the growth temperature and V/III ratio on the hand-edge to deep lever luminescence ratio (I-b/I-d) indicates that a large supply of active nitrogen is essential for obtaining excellent optical properties. GaN grown under optimised conditions exhibits an I-b/I-d ratio of 10.9 al 300K and 1300 at 22K.

引用

页码：1102 / 1103

页数：2

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