Carrier density imaging of lateral epitaxially overgrown GaN using scanning confocal Raman microscopy

被引：13

作者：

Matthews, MJ

Hsu, JWP

Gu, S

Kuech, TF

机构：

[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[2] Univ Wisconsin, Dept Chem Engn, Madison, WI 53706 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 19期

关键词：

D O I：

10.1063/1.1415421

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaN thin films, grown by the lateral epitaxial overgrowth (LEO) method, are studied by scanning confocal Raman microscopy. By measuring changes in coupled longitudinal-optical phonon-plasmon frequencies and using a standard harmonic oscillator dielectric function, detailed images of carrier density could be formed. Carrier concentrations are extremely high (similar to 10(20) cm(-3)) immediately above SiOx mask layers and decrease abruptly when the SiOx mask are not directly exposed to the growth surface, implying that SiOx masks are the source of dopants. Images of intergrated E-1 longitudinal-optical phonon intensities could be compared with free-carrier images and showed a clear anticorrelation throughout the LEO structure. (C) 2001 American Institute of Physics.

引用

收藏

页码：3086 / 3088

页数：3

相关论文

共 21 条

[1] FIRST-ORDER RAMAN EFFECT IN WURTZITE-TYPE CRYSTALS [J].

ARGUELLO, CA ;

ROUSSEAU, DL ;

PORTO, SPS .

PHYSICAL REVIEW, 1969, 181 (03) :1351-&

[2] Strain relaxation and strong impurity incorporation in epitaxial laterally overgrown GaN: Direct imaging of different growth domains by cathodoluminescence microscopy and micro-Raman spectroscopy [J].

Bertram, F ;

Riemann, T ;

Christen, J ;

Kaschner, A ;

Hoffmann, A ;

Thomsen, C ;

Hiramatsu, K ;

Shibata, T ;

Sawaki, N .

APPLIED PHYSICS LETTERS, 1999, 74 (03) :359-361

[3]

Dunn KA, 2000, MRS INTERNET J N S R, V5

[4] Optical characterization of lateral epitaxial overgrown GaN layers [J].

Freitas, JA ;

Nam, OH ;

Davis, RF ;

Saparin, GV ;

Obyden, SK .

APPLIED PHYSICS LETTERS, 1998, 72 (23) :2990-2992

[5]

GU S, UNPUB

[6]

Hon D. T., 1973, Applied Physics, V1, P241, DOI 10.1007/BF00889771

[7] Spatial variation of electrical properties in lateral epitaxially overgrown GaN [J].

Hsu, JWP ;

Matthews, MJ ;

Abusch-Magder, D ;

Kleiman, RN ;

Lang, DV ;

Richter, S ;

Gu, SL ;

Kuech, TF .

APPLIED PHYSICS LETTERS, 2001, 79 (06) :761-763

[8] DETERMINATION OF THE CHARGE CARRIER CONCENTRATION AND MOBILITY IN N-GAP BY RAMAN-SPECTROSCOPY [J].

IRMER, G ;

TOPOROV, VV ;

BAIRAMOV, BH ;

MONECKE, J .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 119 (02) :595-603

[9] Blue diode lasers [J].

Johnson, NM ;

Nurmikko, AV ;

DenBaars, SP .

PHYSICS TODAY, 2000, 53 (10) :31-36

[10] Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier concentration of thick GaN samples [J].

Kaschner, A ;

Hoffmann, A ;

Thomsen, C ;

Bertram, F ;

Riemann, T ;

Christen, J ;

Hiramatsu, K ;

Sone, H ;

Sawaki, N .

APPLIED PHYSICS LETTERS, 2000, 76 (23) :3418-3420