Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier concentration of thick GaN samples

被引：30

作者：

Kaschner, A

Hoffmann, A

Thomsen, C

Bertram, F

Riemann, T

Christen, J

Hiramatsu, K

Sone, H

Sawaki, N

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Otto von Guericke Univ, Inst Expt Phys, D-39016 Magdeburg, Germany

[3] Mie Univ, Fac Engn, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan

[4] Nagoya Univ, Sch Engn, Dept Elect, Chikusa Ku, Aichi 4648603, Japan

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 23期

关键词：

D O I：

10.1063/1.126665

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cathodoluminescence (CL) and micro-Raman spectroscopy were applied to study microscopically the optical and structural properties of two epitaxial-laterally overgrown GaN structures with tungsten masks in [1 (1) under bar 00] and [11 (2) under bar 0] direction, respectively. A free-carrier concentration higher than 10(19) cm(-3) was observed right above the masks, leading to a gradient in free-carrier concentration over the whole layer thickness. We used the normalized longitudinal-optical-phonon intensity and the broad band around 650 cm(-1) as a measure for the free-electron concentration, which is a promising method to determine the free-carrier concentration justified by the good correlation with CL results. (C) 2000 American Institute of Physics. [S0003-6951(00)00813-8].

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页码：3418 / 3420

页数：3

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