Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN

被引：56

作者：

Kaschner, A

Hoffmann, A

Thomsen, C

Bertram, F

Riemann, T

Christen, J

Hiramatsu, K

Shibata, T

Sawaki, N

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Otto Von Guericke Univ, Inst Expt Phys, D-39016 Magdeburg, Germany

[3] Mie Univ, Dept Elect & Elect Engn, Mie 5148507, Japan

[4] Nagoya Univ, Dept Elect, Nagoya, Aichi 46401, Japan

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 22期

关键词：

D O I：

10.1063/1.123331

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Local strain relaxation as well as inhomogeneous impurity incorporation in epitaxial laterally overgrown GaN (ELOG) structures is microscopically characterized using spectrally resolved scanning cathodoluminescence (CL) and micro-Raman spectroscopy. We correlate the different CL emission spectra with results of spatially resolved Raman-scattering experiments sensing the local strain and free-carrier concentration. (C) 1999 American Institute of Physics. [S0003-6951(99)03220-9].

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页码：3320 / 3322

页数：3

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