GaN epitaxial lateral overgrowth and optical characterization

被引：46

作者：

Li, X ^{[1
]}

Bishop, SG ^{[1
]}

Coleman, JJ ^{[1
]}

机构：

[1] Univ Illinois, Microelect Lab, Urbana, IL 61821 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 09期

关键词：

D O I：

10.1063/1.122121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the epitaxial lateral overgrowth (ELO) of GaN from narrow stripes with triangular cross sections by atmospheric pressure metal organic chemical vapor deposition, and characterize the optical properties of these stripes at each stage of the growth using spatially resolved cathodoluminescence spectroscopy, wavelength imaging, and line scans. An improvement of the optical quality of the GaN materials grown by the ELO technique is clearly shown by the appearance of a free exciton peak, the enhancement of bandedge emission, and the weakening of the yellow emission. (C) 1998 American Institute of Physics.

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页码：1179 / 1181

页数：3

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