Octahedral void defects observed in the bulk of Czochralski silicon

被引：39

作者：

Ueki, T ^{[1
]}

Itsumi, M ^{[1
]}

Takeda, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, SYST ELECT LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 10期

关键词：

D O I：

10.1063/1.118543

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We found octahedral void defects in the bulk of silicon wafers by using infrared tomography. These voids are often twin type and their sizes are about 100 nm. A 2-nm-thick layer exists on the side walls of the void defects. Our analysis suggests that the 2-nm-thick layer is SiOx. It is believed that the void structure is formed as a result of agglomeration of vacancies during Si-ingot growth. (C) 1997 American Institute of Physics.

引用

页码：1248 / 1250

页数：3

共 4 条

[1] THE ORIGIN OF DEFECTS IN SIO2 THERMALLY GROWN ON CZOCHRALSKI SILICON SUBSTRATES [J].

ITSUMI, M ;

TOMITA, M ;

YAMAWAKI, M .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (03) :1940-1943

[2] THE COMPOSITION OF OCTAHEDRON STRUCTURES THAT ACT AS AN ORIGIN OF DEFECTS IN THERMAL SIO2 ON CZOCHRALSKI SILICON [J].

ITSUMI, M ;

AKIYA, H ;

UEKI, T ;

TOMITA, M ;

YAMAWAKI, M .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (10) :5984-5988

[3] Octahedral-structured gigantic precipitates as the origin of gate-oxide defects in metal-oxide-semiconductor large-scale-integrated circuits [J].

Itsumi, M ;

Akiya, H ;

Ueki, T ;

Tomita, M ;

Yamawaki, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1996, 35 (2B) :812-817

[4] ORIGIN AND ELIMINATION OF DEFECTS IN SIO2 THERMALLY GROWN ON CZOCHRALSKI SILICON SUBSTRATE [J].

ITSUMI, M ;

KIYOSUMI, F .

APPLIED PHYSICS LETTERS, 1982, 40 (06) :496-498

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