Rapid at-wavelength inspection of EUV mask blanks by photoresist transfer

被引:6
作者
Spector, SJ [1 ]
White, DL [1 ]
Tennant, DM [1 ]
Luo, P [1 ]
Wood, OR [1 ]
机构
[1] Brookhaven Natl Lab, Bell Labs, Lucent Technol, Upton, NY 11973 USA
来源
18TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY AND MANAGEMENT | 1998年 / 3546卷
关键词
extreme-ultraviolet; lithography; mask inspection; reflective masks;
D O I
10.1117/12.332877
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We have developed a new technique for at-wavelength inspection of EUV mask blanks. In this technique a thin layer of EUV photoresist is applied directly to a mask blank which is then flood exposed with EUV light and partially developed. We have demonstrated using atomic force microscopy (AFM) that a change in reflectance of only 12% can cause a similar to 50 Angstrom mound in ZEP photoresist. We propose that such mounds could be detected by existing optical inspection tools, and have demonstrated the detection of similar features in ZEP (created using electron beam lithography) by an automated darkfield optical scanning instrument. The greatest advantage of the technique is speed, since both steps (EUV flood exposure and optical inspection) can be done rapidly. Difficulties, such as contamination and resist roughness, are discussed along with possible solutions.
引用
收藏
页码:548 / 555
页数:8
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