Independently driven four-tip probes for conductivity measurements in ultrahigh vacuum

被引:117
作者
Shiraki, I
Tanabe, F
Hobara, R
Nagao, T
Hasegawa, S
机构
[1] Univ Tokyo, Sch Sci, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan
[2] Japan Soc Promot Sci, Chiyoda Ku, Tokyo 1028471, Japan
[3] Japan Sci & Technol Corp, Core Res Evolut Sci & Technol, Kawaguchi, Saitama 3320012, Japan
关键词
surface electrical transport (surface conductivity; surface recombination; etc.); scanning electron microscopy (SEM); silicon;
D O I
10.1016/S0039-6028(01)01276-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
To measure electrical conductivity of materials in scales ranging from nanometer to millimeter, a four-point probe system was developed and installed in an ultrahigh-vacuum. scanning electron microscope (UHV-SEM). Each probe, made of a W tip, was independently driven with piezoelectric actuators and a scanner in XYZ directions to achieve precise positioning in nanometer scales. The SEM was used for observing the tips for positioning, as well as the sample surface together with scanning reflection-high-energy electron diffraction capability. This four-point probe system has two kinds of special devices. One is octapole tube-type scanners for tip scanning parallel to the sample surface with negligible displacements normal to the surface. Another is a pre-amplifier which can be switched in current measurement mode between tunnel contact for scanning tunneling microscopy and direct contact for four-point probe method. The electrical resistance of a silicon crystal with a Si(1 1 1)-7 x 7 clean surface was measured with this machine as a function of probe spacing between I mm and I un. The result clearly showed an enhancement of surface sensitivity in resistance measurement by reducing the probe spacing. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:633 / 643
页数:11
相关论文
共 7 条
[1]  
Aono M., 1998, Oyo Buturi, V67, P1361
[2]   Structures and electronic transport on silicon surfaces [J].
Hasegawa, S ;
Tong, X ;
Takeda, S ;
Sato, N ;
Nagao, T .
PROGRESS IN SURFACE SCIENCE, 1999, 60 (5-8) :89-257
[3]   Atomic imaging of macroscopic surface conductivity [J].
Hasegawa, S .
CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE, 1999, 4 (05) :429-434
[4]   Surface-state bands on silicon -: Si(111)-√3 x √3-Ag surface superstructure [J].
Hasegawa, S ;
Sato, N ;
Shiraki, I ;
Petersen, CL ;
Boggild, P ;
Hansen, TM ;
Nagao, T ;
Grey, F .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2000, 39 (6B) :3815-3822
[5]   Microfour-point probe for studying electronic transport through surface states [J].
Petersen, CL ;
Grey, F ;
Shiraki, I ;
Hasegawa, S .
APPLIED PHYSICS LETTERS, 2000, 77 (23) :3782-3784
[6]   Micro-four-point probes in a UHV scanning electron microscope for in-situ surface-conductivity measurements [J].
Shiraki, I ;
Nagao, T ;
Hasegawa, S ;
Petersen, CL ;
Boggild, P ;
Hansen, TH ;
Grey, F .
SURFACE REVIEW AND LETTERS, 2000, 7 (5-6) :533-537
[7]   Unoccupied surface states on Si(111)√3x√3-Ag [J].
Viernow, J ;
Henzler, M ;
O'Brien, WL ;
Men, FK ;
Leibsle, FM ;
Petrovykh, DY ;
Lin, JL ;
Himpsel, FJ .
PHYSICAL REVIEW B, 1998, 57 (04) :2321-2326