Atomic imaging of macroscopic surface conductivity

被引：6

作者：

Hasegawa, S

机构：

[1] Univ Tokyo, Sch Sci, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

[2] Japan Sci & Technol Corp, Core Res & Evolut Sci & Technol, Kawaguchi, Saitama 3320012, Japan

来源：

CURRENT OPINION IN SOLID STATE & MATERIALS SCIENCE | 1999年 / 4卷 / 05期

关键词：

D O I：

10.1016/S1359-0286(99)00048-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling microscopy (STM) enables direct imaging of surface-stare bands, through which electrical conduction occurs, confirmed by direct measurements with the four-point probe method. STM images also exhibit voltage drops along a surface due to electrical resistance of the surface states (scanning tunneling potentiometry). Scanning micro-four-point probes and multi-tip STM are newborn techniques fur much more direct mapping of the conductivity. Such capability of imaging provides direct insights on carrier scattering at atomic scales. (C) 2000 Elsevier Science Ltd. All rights reserved.

引用

页码：429 / 434

页数：6

共 34 条

[1] Asymmetric structure of the Si(111)-√3 x √3-Ag surface [J].