Measurement of surface state conductance using STM point contacts

被引：47

作者：

Hasegawa, Y ^{[1
]}

Lyo, IW ^{[1
]}

Avouris, P ^{[1
]}

机构：

[1] IBM CORP, THOMAS J WATSON RES CTR, YORKTOWN HTS, NY 10598 USA

来源：

SURFACE SCIENCE | 1996年 / 357卷 / 1-3期

关键词：

electrical transport; electrical transport measurements; low index single crystal surfaces; metallic surfaces; scanning tunneling microscopy; silicon;

D O I：

10.1016/0039-6028(96)00052-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

It is shown that the STM can be used to measure the electrical conductance of surface states via tip-sample point contacts. In particular, the electrical conductance of the Si(111)7 x 7 surface is discussed. The experimental results indicate that the conductance consists of two components. One involves transport through the Schottky barrier formed at the interface while the ether is sensitive to surface properties. The surface sensitive conductance depends on the amount of adsorbed oxygen and the step structure surrounding the contact area, but does not depend on bulk properties such as the type of dopant of the semiconductor substrate. These findings cannot be explained by models of conventional surface conductance due to a space charge layer formation. The conductance thus should he closely related with surface slate conductance of the Si(111)7 x 7 structure.

引用

页码：32 / 37

页数：6

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