Thermally oxidized tin black films for gas sensing

被引：14

作者：

Lee, YS ^{[1
]}

Kwon, OS ^{[1
]}

Lee, SM ^{[1
]}

Song, KD ^{[1
]}

Shim, CH ^{[1
]}

Rue, GH ^{[1
]}

Lee, DD ^{[1
]}

机构：

[1] Kyungpook Natl Univ, Sch Elect & Elect Engn, Puk Gu, Taegu 702701, South Korea

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2003年 / 93卷 / 1-3期

关键词：

thermally oxidize; tin black films; gas sensing;

D O I：

10.1016/S0925-4005(03)00235-1

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The tin dioxide (SnO2) films were been prepared by oxidization of tin black film which was deposited by thermal evaporation. This method can be used for a simple and economical fabrication of a SnO2 gas sensor. These films also have an ultra-porous structure and a grain size in the nanometer. The reduction of particle size to nanometers leads to a dramatic improvement in sensitivity. The particle size and structural properties of SnO2 film were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Through the addition of Pt sol as a catalyst, the SnO2/Pt films acquired an appropriate resistance and stable reaction, though sensitivity decreased. The gas sensing characteristics were also investigated using iso-C4H10, CH4, C3H8, and CO gases. (C) 2003 Published by Elsevier Science B.V.

引用

页码：556 / 561

页数：6

共 9 条

[1] Nanostructured semiconductor gas sensors to overcome sensitivity limitations due to percolation effects [J].