Electrical properties of sprayed CuInS2 films for solar cells

被引:27
作者
Mere, A [1 ]
Kijatkina, O [1 ]
Rebane, H [1 ]
Krustok, J [1 ]
Krunks, M [1 ]
机构
[1] Tallinn Univ Technol, Inst Mat Sci, EE-19086 Tallinn, Estonia
关键词
chalcogenides; thin films; multilayers; chemical synthesis; electrical properties;
D O I
10.1016/S0022-3697(03)00124-0
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
CuInS2 films and superstrate configuration ZnO/CdS/CuInS2 solar cells were prepared by cost-effective spray pyrolysis technique using the Cu/In molar ratios of 0.9, 1.0 and 1.1 in spray solution. Appropriate metal chlorides and thiourea were used as starting chemicals to prepare the absorber layer. XRD, scanning electron microscopy, current-voltage, capacitance-voltage and frequency-swept admittance spectroscopy methods have been used to characterize sprayed absorber and solar cell. It has been shown that the carrier concentrations in CuInS2 absorber layer is close to 10(17) cm(-3) and V-OC temperature dependent curve extrapolated to T = 0 K gives V-OC(0) of 1.06 V. The columnar microstructure and small size of crystallites in sprayed films supposed to be responsible for inferior output characteristics of sprayed solar cell as V-OC = 443 mV, j(SC) = 5.5 mA cm(-2), FF = 37%. According to the frequency-swept capacitance measurements the junction with lowest energy losses is formed with the absorber deposited from In-rich solution. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2025 / 2029
页数:5
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