Excitation mechanism of Er in Si studied with a free-electron laser

被引：1

作者：

Gregorkiewicz, T

Thao, DTX

Tsimperidis, I

Bekman, HHPT

Langerak, CJGM

Michel, J

Kimerling, LC

机构：

[1] Univ Amsterdam, Van der Waals Zeeman Inst, NL-1018 XE Amsterdam, Netherlands

[2] TNO, Phys & Elect Lab, NL-2509 JG The Hague, Netherlands

[3] FOM, Inst Plasma Phys Rijnhuizen, NL-3430 BE Nieuwegein, Netherlands

[4] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

[5] DHBK, Int Training Inst Mat Sci, Hanoi, Vietnam

来源：

JOURNAL OF LUMINESCENCE | 1998年 / 80卷 / 1-4期

关键词：

RE ion; energy transfer; free-electron laser;

D O I：

10.1016/S0022-2313(98)00114-8

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We investigate the influence of infrared illumination using a free-electron laser on the photoluminescence of erbium-implanted silicon material. In addition to the earlier reported quenching of the Er-related photoluminescence due to dissociation of the intermediate excitation stage, two more features of the energy transfer mechanism are revealed. In the wavelength dependence of the quenching effect a local extreme is detected for a beam energy of approximately 100 meV. A possible origin of this effect is discussed. Further, the current experiment revealed the presence of non-radiative recombination centers which could transfer their energy to Er ions under the influence of the infrared beam. The centers were found to be characterized by extremely slow generation and decay kinetics. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：291 / 295

页数：5

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