Excitation and deexcitation of Er3+ in crystalline silicon

被引:120
作者
Kik, PG
deDood, MJA
Kikoin, K
Polman, A
机构
[1] FOM Inst. for Atom. and Molec. Phys., 1098 SJ Amsterdam
[2] Weizmann Institute of Science
关键词
D O I
10.1063/1.118680
中图分类号
O59 [应用物理学];
学科分类号
摘要
Temperature dependent measurements of the 1.54 mu m photoluminescence of Er implanted N codoped crystalline Si are made. Upon increasing the temperature from 12 to 150 K, the intensity quenches by more than a factor thousand, while the lifetime quenches from 420 to 3 mu s. The quenching processes are described by an impurity Auger energy transfer model that includes bound exciton dissociation and a nonradiative energy backtransfer process. Electron and hole trap levels are determined. Direct evidence for a backtransfer process follows from spectral response measurements on an Er-implanted Si solar cell. (C) 1997 American Institute of Physics.
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页码:1721 / 1723
页数:3
相关论文
共 11 条
  • [1] [Anonymous], SILICON SOLAR CELLS
  • [2] ABSORPTION AND EMISSION CROSS-SECTION OF ER3+ DOPED SILICA FIBERS
    BARNES, WL
    LAMING, RI
    TARBOX, EJ
    MORKEL, PR
    [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (04) : 1004 - 1010
  • [3] High efficiency and fast modulation of Er-doped light emitting Si diodes
    Coffa, S
    Franzo, G
    Priolo, F
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (14) : 2077 - 2079
  • [4] TEMPERATURE-DEPENDENCE AND QUENCHING PROCESSES OF THE INTRA-4F LUMINESCENCE OF ER IN CRYSTALLINE SI
    COFFA, S
    FRANZO, G
    PRIOLO, F
    POLMAN, A
    SERNA, R
    [J]. PHYSICAL REVIEW B, 1994, 49 (23): : 16313 - 16320
  • [5] Incorporation, excitation and de-excitation of erbium in crystal silicon
    deDood, MJA
    Kik, PG
    Shin, JH
    Polman, A
    [J]. RARE EARTH DOPED SEMICONDUCTORS II, 1996, 422 : 219 - 225
  • [6] OPTICAL ACTIVATION OF ER-3+ IMPLANTED IN SILICON BY OXYGEN IMPURITIES
    FAVENNEC, PN
    LHARIDON, H
    MOUTONNET, D
    SALVI, M
    GAUNEAU, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (04): : L524 - L526
  • [7] Keevers M J, 1995, P 13 EUR PHOT SOL EN, P1215
  • [8] IMPURITY ENHANCEMENT OF THE 1.54-MU-M ER3+ LUMINESCENCE IN SILICON
    MICHEL, J
    BENTON, JL
    FERRANTE, RF
    JACOBSON, DC
    EAGLESHAM, DJ
    FITZGERALD, EA
    XIE, YH
    POATE, JM
    KIMERLING, LC
    [J]. JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) : 2672 - 2678
  • [9] ERBIUM POINT-DEFECTS IN SILICON
    NEEDELS, M
    SCHLUTER, M
    LANNOO, M
    [J]. PHYSICAL REVIEW B, 1993, 47 (23): : 15533 - 15536
  • [10] ERBIUM IN CRYSTAL SILICON - OPTICAL ACTIVATION, EXCITATION, AND CONCENTRATION LIMITS
    POLMAN, A
    VANDENHOVEN, GN
    CUSTER, JS
    SHIN, JH
    SERNA, R
    ALKEMADE, PFA
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (03) : 1256 - 1262