Strained n-MOSFET with embedded Source/Drain stressors and strain-transfer structure (STS) for enhanced transistor performance

被引：21

作者：

Ang, Kah-Wee ^{[1
]}

Lin, Jianqiang ^{[1
]}

Tung, Chih-Hang ^{[2
]}

Balasubramanian, Narayanan ^{[2
]}

Samudra, Ganesh S. ^{[1
]}

Yeo, Yee-Chia ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, SNDL, Singapore 119260, Singapore

[2] Inst Microelect, Singapore 117685, Singapore

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2008年 / 55卷 / 03期

关键词：

lateral tensile strain; n-MOSFET; silicon-carbon (Si : C); strain-transfer structure (STS);

D O I：

10.1109/TED.2007.915053

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel n-channel MOS transistor with a silicon-germanium (SiGe) heterostructure embedded beneath the channel and silicon-carbon source/drain (Si:C S/D) stressors was demonstrated. The additional SiGe structure couples additional strain from the S/D stressors to the overlying Si channel, leading to enhanced strain effects in the channel region. We termed the SiGe region a strain-transfer structure due to its role in enhancing the transfer of strain from lattice-mismatched S/D stressors to the channel region. Numerical simulations were performed using the finite-element method to explain the strain-transfer mechanism. A significant drive current I-Dsat improvement of 40% was achieved over the unstrained control devices, which is predominantly due to the strain-induced mobility enhancement. In addition, the impact of scaling the device design parameters on transistor drive current performance was investigated. Guidelines on further performance optimization in such a new device structure are provided.

引用

页码：850 / 857

页数：8