Degradation of AlGaN during high-temperature annealing monitored by ultraviolet Raman scattering

被引：19

作者：

Kuball, M

Demangeot, F

Frandon, J

Renucci, MA

Sands, H

Batchelder, DN

Clur, S

Briot, O

机构：

[1] Univ Bristol, HH Wills Phys Lab, Bristol BS8 1TL, Avon, England

[2] Univ Toulouse 3, CNRS, Lab Phys Solides Toulouse, F-31062 Toulouse, France

[3] Univ Leeds, Dept Phys, Leeds LS2 9JT, W Yorkshire, England

[4] Univ Montpellier 2, GES, CNRS, F-34095 Montpellier 5, France

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 04期

关键词：

D O I：

10.1063/1.123141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have illustrated the use of ultraviolet (UV) Raman scattering to investigate the thermal stability of AlGaN layers with high-aluminum content. The degradation pathway of Al(0.72)Ga(0.28)N was monitored for high-temperature treatments up to 1200 degrees C. For annealing temperatures higher than 1150 degrees C, the Al(0.72)Ga(0.28)N film decomposes: a low- and a high-aluminum composition Al(x)Ga(1-x)N phase emerge. At 1100 degrees C, prior to the Al(0.72)Ga(0.28)N decomposition, UV Raman scattering detects the buildup of a large strain in the Al(0.72)Ga(0.28)N film The crystalline quality of Al(0.72)Ga(0.28)N is unaffected up to 1000 degrees C. (C) 1999 American Institute of Physics. [S0003-6951(99)00704-4].

引用

页码：549 / 551

页数：3

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