Electron-doping versus hole-doping in the 2D t-t′ Hubbard model

被引:59
作者
Honerkamp, C [1 ]
机构
[1] ETH Honggerberg, CH-8093 Zurich, Switzerland
关键词
D O I
10.1007/PL00011117
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We compare the one-loop renormalization group flow to strong coupling of the electronic interactions in the two-dimensional t-t ' -Hubbard model with t ' = -0.3t for band fillings smaller and larger than half-filling. Using a numerical N-patch scheme (N = 32, ..., 96) we show that in the electron-doped case with decreasing electron density there is a rapid transition from a d(x2-y2)-wave superconducting regime with small characteristic energy scale to an approximate nesting regime with strong antiferromagnetic tendencies and higher energy scales. This contrasts with the hole-doped side discussed recently which exhibits a broad parameter region where the renormalization group flow suggests a truncation of the Fermi surface at the saddle points. We compare the quasiparticle scattering rates obtained from the renormalization group calculation which further emphasize the differences between the two cases.
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页码:81 / 91
页数:11
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