Evidence for internal resistive barriers in a crystal of the giant dielectric constant material:: CaCu3Ti4O12

被引：202

作者：

Li, J

Sleight, AW

Subramanian, MA

机构：

[1] Oregon State Univ, Dept Chem, Corvallis, OR 97331 USA

[2] DuPont Co Inc, Cent Res & Dev, Expt Stn, Wilmington, DE 19880 USA

来源：

SOLID STATE COMMUNICATIONS | 2005年 / 135卷 / 04期

关键词：

semiconductom; planar defects; dielectric responses; complex impedance spectroscopy;

D O I：

10.1016/j.ssc.2005.04.028

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Complex impedance spectra were obtained on a crystal of CaCu3Ti4O12 (CCTO) from 289 to 456 K. As in the case of ceramic CCTO, these spectra can be interpreted as arising from a conducting material containing insulating barriers. This is then further evidence for the existence of planar defects within crystals of CCTO that act as insulating barriers and produce the large dielectric constant through a space charge mechanism. (c) 2005 Elsevier Ltd. All rights reserved.

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页码：260 / 262

页数：3

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