GaN Nanowires Grown by Molecular Beam Epitaxy

被引：100

作者：

Bertness, Kris A. ^{[1
]}

Sanford, Norman A. ^{[1
]}

Davydov, Albert V. ^{[2
]}

机构：

[1] Natl Inst Stand & Technol, Boulder, CO 80305 USA

[2] NIST, Gaithersburg, MD 20899 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2011年 / 17卷 / 04期

关键词：

Crystal growth; nanotechnology; photoluminescence; semiconductor materials; III-NITRIDE NANOCOLUMNS; CATALYST-FREE GROWTH; LUMINESCENCE PROPERTIES; FIELD-EMISSION; LIGHT; PHOTOLUMINESCENCE; NANORODS; NUCLEATION; DEFECTS; PHOTOCONDUCTIVITY;

D O I：

10.1109/JSTQE.2010.2082504

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include the absence of residual strain, exclusion of most extended defects, long photoluminescence lifetime, low surface recombination velocity, and high mechanical quality factor. The high purity of the nanowires grown by this method allows for controllable n-type doping. P-type doping presents more challenges but has been demonstrated in active light-emitting diode devices. The present understanding of nucleation and growth of these materials is also reviewed.

引用

页码：847 / 858

页数：12

共 117 条

[1] Multicolour luminescence from InGaN quantum wells grown over GaN nanowire arrays by molecular-beam epitaxy [J].