Ultimate quantum efficiency of a superconducting hot-electron photodetector

被引：45

作者：

Il'in, KS ^{[1
]}

Milostnaya, II

Verevkin, AA

Gol'tsman, GN

Gershenzon, EM

Sobolewski, R

机构：

[1] Moscow State Pedag Univ, Dept Phys, Moscow 119435, Russia

[2] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA

[3] Univ Rochester, Laser Energet Lab, Rochester, NY 14627 USA

[4] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 26期

关键词：

D O I：

10.1063/1.122942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The quantum efficiency and current and voltage responsivities of fast hot-electron photodetectors, fabricated from superconducting NbN thin films and biased in the resistive state, have been shown to reach values of 340, 220 A/W, and 4 x 10(4) V/W, respectively, for infrared radiation with a wavelength of 0.79 mu m. The characteristics of the photodetectors are presented within the general model, based on relaxation processes in the nonequilibrium electron heating of a superconducting thin film. The observed, very high efficiency and sensitivity of the superconductor absorbing the photon are explained by the high multiplication rate of quasiparticles during the avalanche breaking of Cooper pairs. (C) 1998 American Institute of Physics. [S0003-6951(98)03252-5].

引用

页码：3938 / 3940

页数：3

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