ULTRAFAST NANOSCALE METAL-SEMICONDUCTOR-METAL PHOTODETECTORS ON BULK AND LOW-TEMPERATURE GROWN GAAS

被引：67

作者：

CHOU, SY ^{[1
]}

LIU, Y ^{[1
]}

KHALIL, W ^{[1
]}

HSIANG, TY ^{[1
]}

ALEXANDROU, S ^{[1
]}

机构：

[1] UNIV ROCHESTER,DEPT ELECT ENGN,ROCHESTER,NY 14627

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 07期

关键词：

D O I：

10.1063/1.107755

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Metal-semiconductor-metal photodetectors of finger spacing and width as small as 100 nm have been fabricated on bulk and low-temperature grown GaAs, and tested using a femtosecond pulse laser and high-speed electro-optic sampling. The fastest photodetectors have a measured full width at half maximum impulse response and a 3-dB bandwidth of 0.87 ps and 510 GHz, respectively, for low-temperature grown GaAs limited by carrier recombination time; and of 1.5 ps and 295 GHz for bulk GaAs, limited by the RC time constant. To our knowledge, they are the fastest detectors of their kinds reported to date.

引用

页码：819 / 821

页数：3

共 9 条

[1] Picosecond characterization of bent coplanar waveguides
Alexandrou, Sotiris
Sobolewski, Roman
Nakano, Hiroyuki
Tousley, Bradford C.
Hsiang, Thomas Y.
[J]. IEEE Microwave and Guided Wave Letters, 1991, 1 (09): : 236 - 238
[2] 375-GHZ-BANDWIDTH PHOTOCONDUCTIVE DETECTOR
CHEN, Y
WILLIAMSON, S
BROCK, T
SMITH, FW
CALAWA, AR
[J]. APPLIED PHYSICS LETTERS, 1991, 59 (16) : 1984 - 1986
[3] TERAHERTZ GAAS METAL-SEMICONDUCTOR-METAL PHOTODETECTORS WITH 25 NM FINGER SPACING AND FINGER WIDTH
CHOU, SY
LIU, Y
FISCHER, PB
[J]. APPLIED PHYSICS LETTERS, 1992, 61 (04) : 477 - 479
[4] FABRICATION OF SUB-50 NM FINGER SPACING AND WIDTH HIGH-SPEED METAL-SEMICONDUCTOR-METAL PHOTODETECTORS USING HIGH-RESOLUTION ELECTRON-BEAM LITHOGRAPHY AND MOLECULAR-BEAM EPITAXY
CHOU, SY
LIU, Y
FISCHER, PB
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (06): : 2920 - 2924
[5] LOW DARK CURRENT GAAS METAL-SEMICONDUCTOR METAL (MSM) PHOTODIODES USING WSIX CONTACTS
ITO, M
WADA, O
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (07) : 1073 - 1077
[6] ULTRAFAST METAL-SEMICONDUCTOR-METAL PHOTODIODES FABRICATED ON LOW-TEMPERATURE GAAS
KLINGENSTEIN, M
KUHL, J
NOTZEL, R
PLOOG, K
ROSENZWEIG, J
MOGLESTUE, C
HULSMANN, A
SCHNEIDER, J
KOHLER, K
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (05) : 627 - 629
[7] KOSCIELNIAK WC, 1989, APPL PHYS LETT, V54, P57
[8] SUBPICOSECOND CHARACTERIZATION OF CARRIER TRANSPORT IN GAAS-METAL-SEMICONDUCTOR-METAL PHOTODIODES
LAMBSDORFF, M
KLINGENSTEIN, M
KUHL, J
MOGLESTUE, C
ROSENZWEIG, J
AXMANN, A
SCHNEIDER, J
HULSMANN, A
LEIER, H
FORCHEL, A
[J]. APPLIED PHYSICS LETTERS, 1991, 58 (13) : 1410 - 1412
[9] 105-GHZ BANDWIDTH METAL-SEMICONDUCTOR METAL PHOTODIODE
VANZEGHBROECK, BJ
PATRICK, W
HALBOUT, JM
VETTIGER, P
[J]. IEEE ELECTRON DEVICE LETTERS, 1988, 9 (10) : 527 - 529

← 1 →