Giant magnetoresistance in an epitaxial NiMnSb/Cu/CoFe multilayer -: art. no. 142503

被引:4
作者
Girgis, E [1 ]
Bach, P [1 ]
Rüster, C [1 ]
Gould, C [1 ]
Schmidt, G [1 ]
Molenkamp, LW [1 ]
机构
[1] Univ Wurzburg, Phys Inst EPIII, D-97074 Wurzburg, Germany
关键词
D O I
10.1063/1.1897828
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have fabricated current-in-plane giant magnetoresistive (GMR) devices based on multilayers of epitaxial NiMnSb and sputtered Cu and CoFe. The devices show a magnetoresistance of up to 3.5% at room temperature. The amplitude of the current-in-plane GMR signal and the nature of the coupling between the two magnetic layers depend on the thickness of the Cu layer. For a 1.5 nm thick Cu layer, the device exhibits antiferromagnetic coupling, whereas a parallel alignment is observed for 2.2 or 3 nm thick Cu layers at low field. (C) 2005 American Institute of Physics.
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页码:1 / 3
页数:3
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