The evolution of the microscopic damage in electromigration studied by multiple electrical measurements

被引：3

作者：

Jones, BK ^{[1
]}

Xu, YZ ^{[1
]}

Zobbi, P ^{[1
]}

机构：

[1] UNIV PARMA,DEPT INFORMAT ENGN,I-43100 PARMA,ITALY

来源：

MICROELECTRONICS AND RELIABILITY | 1996年 / 36卷 / 7-8期

关键词：

D O I：

10.1016/0026-2714(96)00029-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Continuous measurements of the changes in resistance,and a.c. Joule heating effects during electromigration are analysed and interpreted to reveal details of the microscopic degradation during both the main part of the process and the void formation and healing effects in the final stages of failure. Copyright (C) 1996 Elsevier Science Ltd.

引用

页码：1051 / 1062

页数：12

共 8 条

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[8] RESISTANCE OSCILLATIONS INDUCED BY DIRECT-CURRENT ELECTROMIGRATION [J].

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JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (2B) :1030-1036

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