CHARACTERIZATION OF ELECTROMIGRATION DAMAGE BY MULTIPLE ELECTRICAL MEASUREMENTS

被引：15

作者：

JONES, BK

XU, YZ

机构：

[1] School of Physics and Materials, Lancaster University, Lancaster

来源：

MICROELECTRONICS AND RELIABILITY | 1993年 / 33卷 / 11-12期

关键词：

D O I：

10.1016/0026-2714(93)90088-G

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An a.c. bridge system has been developed for electromigration studies of integrated circuit metal film interconnects. Changes in the resistance, second and third harmonic amplitudes of the a.c. excitation signal and the generation of excess low frequency noise have been studied on specimens which have been subjected to a high temperature and current stress. The experimental results show a closer relationship with electromigration damage of the harmonic content and the excess noise than of the resistance changes.

引用

页码：1829 / 1840

页数：12

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