Spin injection across a heterojunction: A ballistic picture

被引:104
作者
Hu, CM
Matsuyama, T
机构
[1] Univ Hamburg, Inst Angew Phys, D-20355 Hamburg, Germany
[2] Univ Hamburg, Zentrum Mikrostrukturforsch, D-20355 Hamburg, Germany
关键词
D O I
10.1103/PhysRevLett.87.066803
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Spin injection across heterojunctions plays a decisive role in the new field of spintronics. Within the ballistic transport regime, we state a general expression for the spin-injection rate in a heterojunction made of two ballistic electrodes. Both the spin-orbit interaction and interface scattering effect are taken into account. Our model is consistent with the well-documented results of ferromagnetic-metal junctions. It explains the recent experimental results of a dilute-magnetic-semiconductor/semiconductor junction and predicts solutions to enhance the spin-injection rate across a ferromagnetic-semiconductor junction.
引用
收藏
页码:66803 / 1
页数:4
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