Laser-induced backside wet etching of sapphire

被引:55
作者
Ding, XM [1 ]
Sato, T [1 ]
Kawaguchi, Y [1 ]
Niino, H [1 ]
机构
[1] Natl Inst AIST, Photoreact Control Res Ctr, Tsukuba, Ibaraki 3058565, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2003年 / 42卷 / 2B期
关键词
laser-induced backside wet etching; excimer laser; sapphire; toluene; pyrene;
D O I
10.1143/JJAP.42.L176
中图分类号
O59 [应用物理学];
学科分类号
摘要
Sapphire plates were etched with the approach of laser-induced backside wet etching (LIBWE) using neat toluene or saturated pyrene/acetone solutions as the etching medium. Using this approach, flexible patterns on the scale of 4-mum can be fabricated on the surface of the plates. The etching process was observed in situ by a CCD camera, which revealed the deposition of black particles and the formation thereafter of a laser-absorbing film in the etched area. By Raman spectroscopic analysis, the film was characterized to be amorphous carbon resulting from the decomposition of toluene or pyrene upon laser irradiation, which is an essential factor contributing to the etching process.
引用
收藏
页码:L176 / L178
页数:3
相关论文
共 20 条
[1]   Laser-induced back-side wet etching of fused silica with an aqueous solution containing organic molecules [J].
Ding, X ;
Yasui, Y ;
Kawaguchi, Y ;
Niino, H ;
Yabe, A .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 75 (03) :437-440
[2]   Laser-induced high-quality etching of fused silica using a novel aqueous medium [J].
Ding, X ;
Kawaguchi, Y ;
Niino, H ;
Yabe, A .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2002, 75 (06) :641-645
[3]  
DING X, 2002, IN PRESS P SPIE
[4]  
Dolgaev S. I., 1996, Quantum Electronics, V26, P65, DOI 10.1070/QE1996v026n01ABEH000590
[5]   Fast etching and metallization of via-holes in sapphire with the help of radiation by a copper vapor laser [J].
Dolgaev, SI ;
Lyalin, AA ;
Simakin, AV ;
Voronov, VV ;
Shafeev, GA .
APPLIED SURFACE SCIENCE, 1997, 109 :201-205
[6]   Fast etching of sapphire by a visible range quasi-cw laser radiation [J].
Dolgaev, SI ;
Lyalin, AA ;
Simakin, AV ;
Shafeev, GA .
APPLIED SURFACE SCIENCE, 1996, 96-8 :491-495
[7]   NANOSECOND AND FEMTOSECOND EXCIMER-LASER ABLATION OF OXIDE CERAMICS [J].
IHLEMANN, J ;
SCHOLL, A ;
SCHMIDT, H ;
WOLFFROTTKE, B .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1995, 60 (04) :411-417
[8]   SYMMETRY-BREAKING IN NITROGEN-DOPED AMORPHOUS-CARBON - INFRARED OBSERVATION OF THE RAMAN-ACTIVE G-BANDS AND D-BANDS [J].
KAUFMAN, JH ;
METIN, S ;
SAPERSTEIN, DD .
PHYSICAL REVIEW B, 1989, 39 (18) :13053-13060
[9]   Improvement of imprinted pattern uniformity using sapphire mold [J].
Komuro, M ;
Tokano, Y ;
Taniguchi, J ;
Kawasaki, T ;
Miyamoto, I ;
Hiroshima, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (6B) :4182-4185
[10]  
Lide D.R., 2000, CRC Hand book of chemistry and physics, P12