Growth of carbon nanowalls on a SiO2 substrate by microwave plasma-enhanced chemical vapor deposition

被引：66

作者：

Tanaka, K

Yoshimura, M

Okamoto, A

Ueda, K

机构：

[1] Toyota Technol Inst, Nano High Tech Res Ctr, Tempaku Ku, Nagoya, Aichi 4688511, Japan

[2] Toyota Cent Res & Dev Labs Inc, Aichi 4801192, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 4A期

关键词：

carbon nanowall; growth process; plasma CVD; SiO2; TEM; carbon nanotube;

D O I：

10.1143/JJAP.44.2074

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the growth process of carbon nanowalls (CNWs) on a SiO2 substrate by microwave plasma-enhanced chemical vapor deposition (MPECVD). It is revealed that the CNWs are grown at the fine-textured structure on the SiO2 and the growth process does not require the catalyst. The CNW initially has a semicircular shape. The height, thickness, and mesh size increase with growth time. It is found that the height of CNWs as a function of time obeys the square root law. Extremely high growth rate, approximately 10 mu m/h, is achieved, in contrast to previous studies.

引用

页码：2074 / 2076

页数：3