Lasing in submonolayer CdSe structures in a ZnSe matrix without external optical confinement

被引：6

作者：

Krestnikov, IL ^{[1
]}

Ledentsov, NN ^{[1
]}

Maksimov, MV ^{[1
]}

Sakharov, AV ^{[1
]}

Ivanov, SV ^{[1
]}

Sorokin, SV ^{[1
]}

Tenishev, LN ^{[1
]}

Kop'ev, PS ^{[1
]}

Alferov, ZI ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1997年 / 23卷 / 01期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1261607

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that in order to achieve lasing in structures with CdSe submonolayers inserted in a ZnSe matrix, no additional optical confinement of the active region using thick wide-gap layers is required. The high oscillator strength of the excitons trapped at CdSe islands modulates the permittivity and thus produces a natural exciton-induced waveguiding effect. (C) 1997 American Institute of Physics. [S1063-7850(97)00701-5].

引用

页码：23 / 25

页数：3

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