Composition, stoichiometry and growth rate control in molecular beam epitaxy of ZnSe based ternary and quaternary alloys

被引:45
作者
Ivanov, SV [1 ]
Sorokin, SV [1 ]
Kopev, PS [1 ]
Kim, JR [1 ]
Jung, HD [1 ]
Park, HS [1 ]
机构
[1] SAMSUNG ADV INST TECHNOL,SUWON 440600,SOUTH KOREA
关键词
D O I
10.1016/0022-0248(95)00588-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
This paper presents an original thermodynamic description of (Mg,Zn)(S,Se) MBE growth, which is in a good quantitative agreement with experimental data. This approach provides large flexibility in choosing different growth regimes of pseudomorphic ZnSe-based heterostructures to obtain desirable alloy composition, surface stoichiometry, and growth rate. The possibility to control a nearly lattice-matched to GaAs composition of a Zn1-xMgxSySe1-y alloy from (x=0, y=0.09) to (x=0.07, y=0.13) only by variation of the Mg flux intensity has been theoretically revealed and experimentally realized in an optically pumped ZnMgSSe/ZnSSe/ZnCdSe SQW SCH laser structure with a threshold power density of 20 kW/cm(2) at 300 K.
引用
收藏
页码:16 / 20
页数:5
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