THERMODYNAMIC ANALYSIS OF SEGREGATION EFFECTS IN MBE OF AIII-BV COMPOUNDS

被引:26
作者
IVANOV, SV
KOPEV, PS
LEDENTSOV, NN
机构
[1] A.F. Ioffe Physico-Technical Institute, Academy of Sciences, the USSR, Leningrad, 194021
关键词
D O I
10.1016/0022-0248(91)90963-6
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The main features of MBF growth (growth rate, composition and doping control) can be predicted in the framework of a thermodynamic description, ab initio. In this paper, special attention is given to the thermodynamic analysis of segregation effects (base elements and impurities) as well as to the interplay between impurity surface segregation and diffusion.
引用
收藏
页码:151 / 161
页数:11
相关论文
共 33 条
[1]   INVESTIGATION OF SURFACE-ROUGHNESS OF MOLECULAR-BEAM EPITAXY GA1-XALXAS LAYERS AND ITS CONSEQUENCES ON GAAS/GA1-XALXAS HETEROSTRUCTURES [J].
ALEXANDRE, F ;
GOLDSTEIN, L ;
LEROUX, G ;
JONCOUR, MC ;
THIBIERGE, H ;
RAO, EVK .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (04) :950-955
[2]   BE INCORPORATION IN HEAVILY DOPED MOLECULAR-BEAM EPITAXY GROWN GAAS - EVIDENCE OF NONRADIATIVE BEHAVIOR BY CATHODOLUMINESCENCE AND ELECTRON ACOUSTIC MEASUREMENTS [J].
BRESSE, JF ;
PAPADOPOULO, AC .
APPLIED PHYSICS LETTERS, 1987, 51 (03) :183-185
[3]   INFLUENCE OF GROWTH TEMPERATURE ON BE INCORPORATION IN MOLECULAR-BEAM EPITAXY GAAS EPILAYERS [J].
DUHAMEL, N ;
HENOC, P ;
ALEXANDRE, F ;
RAO, EVK .
APPLIED PHYSICS LETTERS, 1981, 39 (01) :49-51
[4]   PHASE-DIAGRAM AND LPE GROWTH-RATE IN THE GA-AS-SN SYSTEM [J].
DUTARTRE, D ;
GAVAND, M .
JOURNAL OF CRYSTAL GROWTH, 1984, 66 (03) :647-654
[5]  
FOXON CT, 1978, ACTA ELECTRON, V21, P139
[6]   MECHANISM OF DIFFUSION OF COPPER IN GERMANIUM [J].
FRANK, FC ;
TURNBULL, D .
PHYSICAL REVIEW, 1956, 104 (03) :617-618
[7]   MODELING OF DOPANT INCORPORATION, SEGREGATION, AND ION SURFACE INTERACTION EFFECTS DURING SEMICONDUCTOR FILM GROWTH BY MOLECULAR-BEAM EPITAXY AND PLASMA-BASED TECHNIQUES [J].
GREENE, JE ;
BARNETT, SA ;
ROCKETT, A ;
BAJOR, G .
APPLICATIONS OF SURFACE SCIENCE, 1985, 22-3 (MAY) :520-544
[8]   DETERMINATION OF MINIMUM ARSENIC PRESSURE FOR MOLECULAR-BEAM EPITAXY OF GA1-YINYAS/GAAS AND GA1-XALXAS [J].
HARMAND, JC ;
ALEXANDRE, F ;
BEERENS, J .
REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (08) :821-825
[9]  
HARRIS JJ, 1984, APPL PHYS A-MATER, V33, P87, DOI 10.1007/BF00617613
[10]   THERMODYNAMIC ASPECTS OF MOLECULAR-BEAM EPITAXY - HIGH-TEMPERATURE GROWTH IN THE GAAS/GA1-XALXAS SYSTEM [J].
HECKINGBOTTOM, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :572-575