共 33 条
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INVESTIGATION OF SURFACE-ROUGHNESS OF MOLECULAR-BEAM EPITAXY GA1-XALXAS LAYERS AND ITS CONSEQUENCES ON GAAS/GA1-XALXAS HETEROSTRUCTURES
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MODELING OF DOPANT INCORPORATION, SEGREGATION, AND ION SURFACE INTERACTION EFFECTS DURING SEMICONDUCTOR FILM GROWTH BY MOLECULAR-BEAM EPITAXY AND PLASMA-BASED TECHNIQUES
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APPLICATIONS OF SURFACE SCIENCE,
1985, 22-3 (MAY)
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DETERMINATION OF MINIMUM ARSENIC PRESSURE FOR MOLECULAR-BEAM EPITAXY OF GA1-YINYAS/GAAS AND GA1-XALXAS
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1987, 22 (08)
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HARRIS JJ, 1984, APPL PHYS A-MATER, V33, P87, DOI 10.1007/BF00617613
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THERMODYNAMIC ASPECTS OF MOLECULAR-BEAM EPITAXY - HIGH-TEMPERATURE GROWTH IN THE GAAS/GA1-XALXAS SYSTEM
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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B,
1985, 3 (02)
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