PHASE-DIAGRAM AND LPE GROWTH-RATE IN THE GA-AS-SN SYSTEM

被引：4

作者：

DUTARTRE, D

GAVAND, M

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1984年 / 66卷 / 03期

关键词：

D O I：

10.1016/0022-0248(84)90165-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：647 / 654

页数：8

共 17 条

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[7]

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[8] DEPENDENCE OF GA1-XALXAS LPE LAYER THICKNESS ON SOLUTION COMPOSITION [J].

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[9]

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