LPE GROWTH-RATE IN ALXGA1-XAS SYSTEM - THEORETICAL AND EXPERIMENTAL-ANALYSIS

被引:20
作者
DUTARTRE, D
机构
关键词
D O I
10.1016/0022-0248(83)90133-1
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
引用
收藏
页码:268 / 274
页数:7
相关论文
共 14 条
[1]   ETCHING OF DISLOCATIONS ON LOW-INDEX FACES OF GAAS [J].
ABRAHAMS, MS ;
BUIOCCHI, CJ .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2855-&
[2]  
DOI A, 1978, JPN J APPL PHYS, V17, P503, DOI 10.1143/JJAP.17.503
[3]   THE EFFECT OF GE ON THE LIQUIDUS AND SOLIDUS IN THE SYSTEM ALGAAS-GE [J].
DUTARTRE, D ;
GAVAND, M ;
MAYET, L ;
LAUGIER, A ;
ANSARA, I .
JOURNAL DE PHYSIQUE, 1982, 43 (NC-5) :39-46
[4]  
HSIEH JJ, 1974, J CRYST GROWTH, V27, P49, DOI 10.1016/0022-0248(74)90418-7
[5]   VARIATION OF SOLID COMPOSITION AND THICKNESS DURING LPE GROWTH OF ALXGA1-XAS [J].
IJUIN, H ;
GONDA, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (07) :1109-1111
[6]   DEPENDENCE OF GA1-XALXAS LPE LAYER THICKNESS ON SOLUTION COMPOSITION [J].
ISOZUMI, S ;
KOMATSU, Y ;
OKAZAKI, N ;
KOYAMA, S ;
KOTANI, T .
JOURNAL OF CRYSTAL GROWTH, 1977, 41 (01) :166-171
[7]  
ISOZUMI S, 1979, FUJITSU SCI TECHNOL, P85
[8]  
MOON RL, 1974, J CRYST GROWTH, V27, P62
[9]   COMPARISON OF THEORY AND EXPERIMENT FOR LPE LAYER THICKNESS OF GAAS AND GAAS ALLOYS [J].
MOON, RL ;
KINOSHITA, J .
JOURNAL OF CRYSTAL GROWTH, 1974, 21 (01) :149-154
[10]  
PAWLIK D, 1978, SIEMENS FORSCH ENTWI, V7, P4