GROWTH OF MBE ZNSXSE1-X USING A NOVEL ELECTROCHEMICAL SULFUR SOURCE

被引：16

作者：

PRIOR, KA

WALLACE, JM

HUNTER, JJ

ADAMS, SJA

HAINES, MJLS

SAOUDI, M

CAVENETT, BC

机构：

[1] Department of Physics, Heriot-Watt University, Edinburgh

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

Semiconducting Zinc Compounds;

D O I：

10.1016/0022-0248(90)90960-S

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this paper we report the first successful use of an electrochemical sulphur source to grown ZnSxSe1-x by the technique of molecular beam epitaxy. Photoluminescence measurements show that layers with 0≤x≤0.2 have been grown and that the material quality is comparable to that grown by other techniques. © 1989.

引用

页码：176 / 179

页数：4

共 12 条

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