Thin Film Field-Effect Phototransistors from Bandgap-Tunable, Solution-Processed, Few-Layer Reduced Graphene Oxide Films

被引：163

作者：

Chang, Haixin ^{[2
]}

Sun, Zhenhua ^{[1
]}

Yuan, Qinghong ^{[2
]}

Ding, Feng ^{[2
]}

Tao, Xiaoming ^{[2
]}

Yan, Feng ^{[1
]}

Zheng, Zijian ^{[2
]}

机构：

[1] Hong Kong Polytech Univ, Dept Appl Phys, Hong Kong, Hong Kong, Peoples R China

[2] Hong Kong Polytech Univ, Inst Text & Clothing, Nanotechnol Ctr, Hong Kong, Hong Kong, Peoples R China

来源：

ADVANCED MATERIALS | 2010年 / 22卷 / 43期

关键词：

TRANSPORT-PROPERTIES; TRANSPARENT; ELECTRODES; DEPOSITION; COMPOSITE;

D O I：

10.1002/adma.201002229

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Thin film field-effect phototransistors (FETs) can be developed from bandgap-tunable, solution-processed, few-layer reduced graphene oxide (FRGO) films. Large-area FRGO films with tunable bandgaps ranging from 2.2 eV to 0.5 eV can be achieved readily by solution-processing technique such as spin-coating. The electronic and optoelectronic properties of FRGO FETs are found to be closely related to their bandgap energy. The resulting phototransistor has great application potential in the field of photodetection.

引用

页码：4872 / +

页数：6

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