Self size-limiting process of InAs quantum dots grown by molecular beam epitaxy

被引：39

作者：

Kaizu, T ^{[1
]}

Yamaguchi, K ^{[1
]}

机构：

[1] Univ Electrocommun, Dept Elect Engn, Chofu, Tokyo 1828585, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 3B期

关键词：

quantum dot; InAs; molecular beam epitaxy; Stranski-Krastanov growth mode; self organization; facet; uniformity; size limiting mechanism;

D O I：

10.1143/JJAP.40.1885

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In the molecular beam epitaxy (MBE) growth of InAs quantum dots (QDs), we investigated the dot formation via the self size-limiting process. Accumulation of size-limited InAs QDs resulted in narrow inhomogeneous broadening of photoluminescence (PL) linewidth and low energy shift of PL peak position. Atomic force microscopy (AFM) and reflection high-energy electron-beam diffraction (RHEED) observations revealed the appearance of {136} facets on the side wall of size-limited InAs dots. It was proposed that the facet formation played an important role in the self size-limiting behavior.

引用

页码：1885 / 1887

页数：3

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