A simple lateral transport device of strongly interacting electron and hole layers

We have fabricated a GaAs device containing independently contacted electron and hole layers with a separation of 14 nm. The device processing avoids the use of self-aligned contacts and is, therefore, greatly simplified. Only basic processing facilities are required, and leakage problems typical of self-aligned contacts are prevented. The resulting increased device yield overcomes a technological barrier, which has so far limited the experimental research of the system. (C) 1999 American Institute of Physics. [S0003-6951(99)04011-5].