Morphology of quench condensed Pb films near the insulator to metal transition

被引:68
作者
Ekinci, KL [1 ]
Valles, JM [1 ]
机构
[1] Brown Univ, Dept Phys, Providence, RI 02912 USA
关键词
D O I
10.1103/PhysRevLett.82.1518
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present in situ scanning tunneling microscopy topographs of Pb films, formed by vapor deposition onto cold (T < 20 K), inert substrates, near their insulator to metal transition; At the critical mass deposited thickness for conduction, d(G) congruent to 5.2 nm, the films consist of approximately two layers of nanoclusters with diameter, 2r approximate to 20 nm and height, 3.5 less than or equal to h less than or equal to 5.5 nm. We discuss how the nanocluster size and formation mechanism dictate the need fur two layers to form in order for conduction to commence. [S0031-9007(99)08430-6].
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页码:1518 / 1521
页数:4
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