Transport properties of GaAs1-xNx thin films grown by metalorganic chemical vapor deposition

A series of devices with the structure GaAs/GaAs1-xNx/GaAs and 0.01 <x <0.03 have been grown by metalorganic chemical vapor deposition. The transient photoconductive decay of these structures is measured as a function of excitation wavelength and injection level. The decay process is generally described by a stretched exponential function with anomously large decay times. The photoconductive excitation spectrum extends into the infrared, well beyond the bandgap of the given alloy. The processes here can be explained by nitrogen clusters that produce charge separation. (C) 2000 American Institute of Physics. [S0003-6951(00)03048-5].