Highly regular self-organization of step bunches during growth of SiGe on Si(113)

被引：16

作者：

Darhuber, AA ^{[1
]}

Zhu, J

Holy, V

Stangl, J

Mikulik, P

Brunner, K

Abstreiter, G

Bauer, G

机构：

[1] Johannes Kepler Univ, Inst Halbleiterphys, A-4040 Linz, Austria

[2] TU Munchen, Walter Schottky Inst, D-85748 Garching, Germany

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 11期

关键词：

D O I：

10.1063/1.122197

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the structural properties of highly periodic arrays of terrace steps in a Si/SiGe multilayer grown on a miscut Si(113) substrate by atomic force microscopy, x-ray reflection and high resolution x-ray diffraction. The data reveal a regular array of step bunches with vertical correlation within the multilayer and periodic surface steps extending over lengths of several tens of microns. The (113)-faceted terraces have a lateral period of about 360 nm which is locally modulated due to a long-range waviness of the surface. (C) 1998 American Institute of Physics.

引用

页码：1535 / 1537

页数：3

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