Diffuse x-ray reflection from multilayers with stepped interfaces

被引：34

作者：

Holy, V

Giannini, C

Tapfer, L

Marschner, T

Stolz, W

机构：

[1] CTR NAZL RIC & SVILUPPO MAT,PASTIS,I-72100 BRINDISI,ITALY

[2] UNIV MARBURG,WISSENSCH ZENTRUM MAT WISSENSCH,D-35032 MARBURG,GERMANY

[3] UNIV MARBURG,FACHBEREICH PHYS,D-35032 MARBURG,GERMANY

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.55.9960

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Diffuse x-ray reflection from a multilayer with stepped interfaces has been investigated theoretically and experimentally. The statistical description of the stepped interfaces has been based on the theory of random processes. Diffuse x-ray scattering from those interfaces has been calculated using the distorted-wave Born approximation. The theory has been used for an analysis of the intensity distributions measured on a GaAs/(GaIn)As/GaAs/Ga(PAs) strained-layer superlattice grown on a miscut substrate. From the measurements, the mean size of the interface terraces and their orientations could be determined.

引用

页码：9960 / 9968

页数：9

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